PART |
Description |
Maker |
FGB20N6S2D FGH20N6S2D FGB20N6S2DT FGP20N6S2D |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC :5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V, SMPS II Series N-Channel IGBT with Stealth Diode, TO-263/D2PAK Package 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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FGB20N6S2 FGH20N6S2 FGP20N6S2 FGB20N6S2T |
28 A, 600 V, N-CHANNEL IGBT, TO-263AB TO-263AB, 3 PIN 600V/ SMPS II Series N-Channel IGBT 600V, SMPS II Series N-Channel IGBT, TO-263/D2PAK Package
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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HGTP7N60A4 HGT1S7N60A4S9A HGT1S7N60A4S9A_04 HGTG7N |
600V, SMPS Series N-Channel IGBT 600V,SMPS Series N-Channel IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
HGT1S3N60A4S |
600V, SMPS Series N-Channel IGBT
|
Fairchild Semiconductor
|
FGH60N6S2 |
600V, SMPS II Series N-Channel IGBT 600V/ SMPS II Series N-Channel IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
HGT1S20N60A4S9A |
600V, SMPS Series N-Channel IGBTsnull 70 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Fairchild Semiconductor, Corp.
|
HGT1N30N60A4D |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
|
Fairchild Semiconductor
|
UGP7N60L-TA3-T UGP7N60G-TA3-T |
600V, SMPS N-CHANNEL IGBT
|
Unisonic Technologies
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|
FQA10N60C |
600V N-Channel MOSFET 600V N-Channel Advance Q-FET C-Series
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FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
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